DMP2305U new product p-channel enhancem ent mode mosfet features ? low on-resistance ? 60m ? @ v gs = -4.5v ? 90m ? @ v gs = -2.5v ? 113m ? @ v gs = -1.8v ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4) part number qualification case packaging DMP2305U-7 commercial sot23 3000/tape & reel DMP2305Uq-7 automotive sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. ? 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic to p view d g s source gate drain 23p = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) 23p ym product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
new product maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -20 v gate-source voltage v gss 8 v continuous drain current (note 5) steady state t a = 25c t a = 70c i d -4.2 -3.4 a pulsed drain current (note 6) i dm -10 a thermal characteristics characteristic symbol value unit power dissipation (note 5) p d 1.4 w thermal resistance, junction to ambient @t a = 25c r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25 c i dss ? ? -1.0 a v ds = -20v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 8v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.5 - -0.9 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 45 60 m ? v gs = -4.5v, i d = -4.2a 60 90 v gs = -2.5v, i d = -3.4a 87 113 v gs = -1.8v, i d = -2.0a forward transfer admittance |y fs | ? 9 ? s v ds = -5v, i d = -4a dynamic characteristics input capacitance c iss ? 727 ? pf v ds = -20v, v gs = 0v f = 1.0mhz output capacitance c oss ? 69 ? pf reverse transfer capacitance c rss ? 64 ? pf gate resistance r g 23 ? v gs = 0v, v ds = 0v, f = 1.0mhz switching characteristics total gate charge q g ? 7.6 ? nc v gs = -4.5v, v ds = -4v, i d = -3.5a gate-source charge q g s ? 1.4 ? nc gate-drain charge q g d ? 1.2 ? nc turn-on delay time t d ( on ) ? 14.0 ? ns v ds = -4v, v gs = -4.5v, r l = 4 , r g = 6 , i d = -1a turn-on rise time t r ? 13.0 ? ns turn-off delay time t d ( off ) ? 53.8 ? ns turn-off fall time t f ? 23.2 ? ns notes: 3. device mounted on fr-4 pcb wi th 2oz. copper and test pulse width t 10s. 4. repetitive rating, pulse width limited by junction temperature. 5. short duration pulse test used to minimize self-heating effect. DMP2305U product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
